2SB1565
Transistors
For Power Amplification (−60V, −3A)
2SB1565
zStructure PNP Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm)
TO-220FN
10.
0
4.
5
φ3.
2
2.
8
14.
0
zFeatures 1) Low VCE (sat).
2) Excellent electrical characteristics of DC current Gain hFE.
3) Wide SOA.
(1)Base (2)Collector (3)Emitter
15.
0
12.
0
8.
0 5.
0
1.
2
1.
3
0.
8 2.
54
(1) (2) (3)
2.
54
0.
75
2.
6
zApplications Low frequency power amplifier Stereophonic output Stabilization of power supply zAbsolute maximum ratings (Ta=25°C)
Parameter Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current DC Pulse Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits −60 −60 −7 −3 −6 2 25 15...