2N60/F2N60/I2N60/E2N60/B2N60/D2N60 2A 600V N-channel Enhancement Mode Power
MOSFET
1 Description
These N-channel Enhanced VD
MOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
Which accords with the RoHS standard.
VDSS = 600V RDS(on) (TYP)= 4.
0Ω
ID = 2A
2 Features
● Fast Switching ● Low ON Resistance(Rdson≤4.
5Ω) ● Low Gate Charge(Typ:8nC) ● Low Reverse Transfer Capacitances(Typ:3.
8pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test
TO-220C TO-220F
TO-262
3 Applications
● used in various power switching circuit for system miniaturization and higher efficiency.
● Power swit...