Power Transistors
2SB968
Silicon PNP epitaxial planar type
For low-frequency output amplification Complementary to 2SD1295
6.
5±0.
1 5.
3±0.
1 4.
35±0.
1
Unit: mm
2.
3±0.
1 0.
5±0.
1
7.
3±0.
1 1.
8±0.
1
s Features
q Possible to solder the radiation fin directly to printed cicuit board q High collector to emitter VCEO q Large collector power dissipation PC
s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power dissipation (TC=25°C) Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings –50 –40 –5 –3 –1.
5 20 150
–55 to +150
Unit V V V A A ...