Part Number
|
BAM120 |
Manufacturer
|
Advanced Semiconductor |
Description
|
NPN SILICON RF POWER TRANSISTOR |
Published
|
Aug 19, 2006 |
Detailed Description
|
www.DataSheet4U.com
BAM120
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BAM120 is Designed to operate in a col...
|
Datasheet
|
BAM120
|
Overview
www.
DataSheet4U.
com
BAM120
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BAM120 is Designed to operate in a collector modulated VHF
Power Amplifier Applications up to 150 MHz.
PACKAGE STYLE .
500 4L FLG
FEATURES:
• ηC = 65 % typ.
@ 120 W/150 MHz • PG = 9.
0 dB typ.
@ 120 W/150 MHz • Omnigold™ Metalization System
MAXIMUM RATINGS
IC VCES VEBO PDISS TJ TSTG θJC 12 A 60 V 4.
0 V 140 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.
2 °C/W
DataSheet4U.
com
1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER
ee DataSh
ORDER CODE: ASI10430
CHARACTERISTICS
SYMBOL
BVCES BVCEO BVEBO hFE COB PG ηC VCC = 27 V IC = 20 mA IC = 50 mA IE = 5.
0 mA VCE = 25 V VCE = 27 V
TC = 25 °C
NONETEST CONDITIONS
MIN...
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