BB402M
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
ADE-208-716A (Z) 2nd.
Edition Dec.
1998 Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 1.
7 dB typ.
at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode.
Withstand up to 240V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4R(SOT-143 var.
)
Outline
MPAK-4R
3 4 2 1
1.
Source 2.
Drain 3.
Gate2 4.
Gate1
Notes: 1.
Marking is “BX–”.
2.
BB402M is individual type number of HITACHI BBFET.
BB402M
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source
voltage Gate1 to source
voltage Gate2 to source
voltage Drain current Channel power di...