BB502M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-809B(Z) 3rd.
Edition Jun.
1999 Features
• • • • Build in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise; NF = 1.
6 dB typ.
at f = 900 MHz High gain; PG = 22 dB typ.
at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode.
Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4(SOT-143mod)
Outline
MPAK-4
2 3 1 4
1.
Source 2.
Gate1 3.
Gate2 4.
Drain
Notes:
1.
2.
Marking is “BS–”.
BB502M is individual type number of HITACHI BBFET.
BB502M
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source
voltage Gate1 to source
voltage Gate2 to source
voltage Drain c...