BC635/637/639
BC635/637/639
Switching and Amplifier Applications
• Complement to BC636/638/640
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCER
Collector-Emitter
Voltage at RBE=1KΩ : BC635
: BC637
: BC639
VCES
Collector-Emitter
Voltage : BC635 : BC637 : BC639
VCEO
Collector-Emitter
Voltage : BC635 : BC637 : BC639
VEBO
Emitter-Base
Voltage
IC Collector Current
ICP Peak Collector Current
IB Base Current
PC Collector Power Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
• PW=5ms, Duty Cycle=10%
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
Colle...