JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
SOT-363 Plastic-Encapsulate Transistors
BC847PN DUAL TRANSISTOR (NPN+PNP)
SOT-363
FEATURES z Epitaxial Die Construction
z Two isolated NPN/PNP(BC847W+BC857W) Transistors in one package
MAKING: 7P
MAXIMUM RATINGS TR1 (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base
Voltage
50 V
VCEO
Collector-Emitter
Voltage
45 V
VEBO
Emitter-Base
Voltage
6V
IC
Collector Current –Continuous
0.
1
A
PC Collector Power Dissipation
200 mW
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
CHARACTERISTICS of TR1 (NPN Transistor) (Ta=25℃ unless otherwise specified)
Parameter Collector...