isc Silicon NPN Power Transistor
DESCRIPTION ·DC Current Gain-
: hFE= 40(Min)@ IC= 0.
15A ·Collector-Emitter Sustaining
Voltage -
: VCEO(SUS)= 60V(Min) ·Complement to type BD138 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as audio
amplifiers and drivers utilizing
complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC IB
PC
TJ Tstg
Collector-Base
Voltage
Collector-Emitter
Voltage
Emitter-Base
Voltage
Collector Current-Continuous
Base Current-Continuous Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ Junction Temperature...