SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
BD135 BD137
BD1 39I
MEDIUM POWER AMPLIFIER APPLICATIONS.
FEATURES .
Designed for Complementary Use with BD136, BD138
and BD140.
7.
9MAX.
Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base
Voltage
BD135 BD137 BD139
Collector-Emitter
Voltage
BD135 BD137 BD139
Emitter-Base
Voltage
Collector Current
DC Peak
Collector Power Dissipation
Ta=25 C Tc^60 C
Junction Temperature
Storage Temperature Range
SYMBOL VCBO
v CEO Vebo I CM
RATING 45 60 80 45 60 80
0.
5 1.
5
PC L stg
6.
5 150
-55-150
UNIT
1.
EMITTER Z.
COLLECTOR (HEAT S INK) Z.
BASE
TO— 126
TOSHIBA
2-8P1A
Weight : 0.
72g
ELECTRICAL CHARACTERISTICS (Ta=25 C)
CHARACTER...