isc Silicon NPN Power Transistor
BD179
DESCRIPTION ·DC Current Gain-
: hFE= 40-250(Min)@ IC= 0.
15A ·Collector-Emitter Sustaining
Voltage -
: VCEO(SUS)= 80V(Min) ·Complement to type BD180 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for medium power linear and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
80
V
VCEO
Collector-Emitter
Voltage
80
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Pulse
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
7
A
30
W
150
℃
Tstg
Storage ...