isc Silicon NPN Power Transistor
BD201/203
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO = 45V(Min)- BD201 60V(Min)- BD203
·Complement to Type BD202/204 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in hi-fi equipment delivering an output
of 15 to 15 W into a 4Ωor 8Ωload.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD201
60
VCBO
Collector-Base
Voltage
V
BD203
60
BD201
45
VCEO
Collector-Emitter
Voltage
V
BD203
60
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak tp≤10ms
12
A
ICSM
Collector Current-Peak tp≤2ms
25
A...