isc Silicon PNP Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.
)@IC = -5A ·Collector-Emitter Saturation
Voltage-
: VCE(sat)= -1.
0 V(Max)@ IC = -8A ·Complement to Type BD317 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high quality
amplifiers operating up to 100 watts
into 8 ohm load.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-100
V
VCEO
Collector-Emitter
Voltage
-100
V
VEBO
Emitter-Base
Voltage
-7
V
IC
Collector Current-Continuous
-16
A
ICM
Collector Current-Peak
-20
A
IB
Base Current-Continuous
-5
A
PC
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