isc Silicon PNP Power Transistor
BD540
DESCRIPTION ·DC Current Gain -
: hFE = 40(Min.
)@ IC= -0.
5A ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -40V(Min) ·Complement to Type BD539 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in medium power linear and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-40
V
VCEO
Collector-Emitter
Voltage
-40
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperatur...