isc Silicon NPN Power Transistor
BD545/A/B/C
DESCRIPTION ·Collector Current -IC= 15A ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO = 40V(Min)- BD545; 60V(Min)- BD545A 80V(Min)- BD545B; 100V(Min)- BD545C
·Complement to Type BD546/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
BD545
40
BD545A
60
VCBO
Collector-Base
Voltage
V
BD545B
80
BD545C
100
BD545
40
VCEO
Collector-Emitter
Voltage
BD545A
60
V
BD545B
80
BD545C
100
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Curr...