isc Silicon NPN Power Transistors
DESCRIPTION High Power Dissipation ·Collector-Emitter Sustaining
Voltage-
: VCEO(SUS)= 110V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as either driver or output unit applications
in audio amplifier circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO VCER VCEO
Collector-Base
Voltage
Collector-Emitter
Voltage RBE= 100Ω
Collector-Emitter
Voltage
130
V
130
V
110
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
7
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
2
A
150
W
200
...