isc Silicon NPN Darlington Power Transistor
BD675A
DESCRIPTION ·Collector–Emitter Breakdown
Voltage—
: V(BR)CEO = 45 V ·DC Current Gain—
: hFE = 750(Min) @ IC= 2 A ·Complement to Type BD676A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as output devices in complementary
general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
45
V
VCEO
Collector-Emitter
Voltage
45
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
4
A
ICP
*Collector Current (Pulse)
6
A
IB
Base Current
PC
Collector Power Dissipation TC=25℃
Ti...