isc Silicon NPN Power Transistor
DESCRIPTION ·DC Current Gain-
: hFE= 40@ IC= 0.
5A ·Collector-Emitter Breakdown
Voltage -
: V(BR)CEO= 80V(Min) ·Complement to type BD722 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio output and general purpose
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base
Voltage
80
VCEO
Collector-Emitter
Voltage
80
VEBO
Emitter-Base
Voltage
5
IC
Collector Current-Continuous
4
ICM
Collector Current-Peak
7
IB
Base Current-Continuous
1
PC
Collector Power Dissipation @ TC=25℃
36
TJ
Junction Temperature
150
Tstg
Storage ...