isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining
Voltage-
: VCEO(SUS)= 60V(Min) ·High DC Current Gain
: hFE= 1000(Min) @IC= 5A ·Low Collector Saturation
Voltage
: VCE(sat)= 2.
0V(Max.
)@ IC= 5.
0A = 3.
0V(Max.
)@ IC= 10A
·Complement to Type BDW45 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose and low speed switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
60
V
VCEO
Collector-Emitter
Voltage
60
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Col...