isc Silicon PNP Darlington Power Transistor
BDW45
DESCRIPTION ·Collector-Emitter Sustaining
Voltage-
: VCEO(SUS)= -60V(Min) ·High DC Current Gain
: hFE= 1000(Min) @IC= -5A ·Low Collector Saturation
Voltage
: VCE(sat)= -2.
0V(Max.
)@ IC= -5.
0A = -3.
0V(Max.
)@ IC= -10A
·Complement to Type BDW40 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose and low speed switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-60
V
VCEO
Collector-Emitter
Voltage
-60
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-15
A
IB
Base Current-Co...