BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
Plastic Medium-Power Complementary Silicon Transistors
These devices are designed for general−purpose amplifier and low−speed switching applications.
Features
• High DC Current Gain −
hFE = 2500 (Typ) @ IC = 4.
0 Adc
• Collector Emitter Sustaining
Voltage − @ 100 mAdc
VCEO(sus) = 80 Vdc (Min) − BDX53B, 54B
VCEO(sus) = 100 Vdc (Min) − BDX53C, 54C
• Low Collector−Emitter Saturation
Voltage −
VCE(sat) = 2.
0 Vdc (Max) @ IC = 3.
0 Adc VCE(sat) = 4.
0 Vdc (Max) @ IC = 5.
0 Adc
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• These Devices are Pb−Free and are RoHS Compliant*
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