BF 1005
Silicon N-Channel
MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating
voltage 5V • Integrated stabilized bias network
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BF 1005
Marking Ordering Code Pin Configuration MZs Q62702-F1498 1 = S 2=D
Package
3 = G2 4 = G1 SOT-143
Maximum Ratings Parameter Drain-source
voltage Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, T S ≤ 76 °C Storage temperature Channel temperature Symbol Value 8 25 10 3 200 - 55 .
.
.
+150 150 V mW °C Unit V mA
VDS ID
±I G1/2SM +VG1SE
Ptot T stg T ch
Thermal Resistance Channel - sol...