DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
MBD128
BF1204 Dual N-channel dual gate MOS-FET
Product specification Supersedes data of 2000 Nov 13 2001 Apr 25
Philips Semiconductors
Product specification
Dual N-channel dual gate MOS-FET
FEATURES • Two low noise gain controlled
amplifiers in a single package • Superior cross-modulation performance during AGC • High forward transfer admittance • High forward transfer admittance to input capacitance ratio.
APPLICATIONS • Gain controlled low noise
amplifiers for VHF and UHF applications with 3 to 9 V supply
voltage, such as digital and analog television tuners and professional communications equipment.
DESCRIPTION The BF1204 is a combi...