BF493S
High
Voltage Transistor
PNP Silicon
Features
• This is a Pb−Free Device*
MAXIMUM RATINGS Rating
Collector −Emitter
Voltage Collector −Base
Voltage Emitter −Base
Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above = 25°C
Symbol VCEO VCBO VEBO
IC PD
Value −350 −350 −6.
0 −500 625 5.
0
Unit Vdc
Vdc Vdc
mAdc
mW mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD 1.
5 W 12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.
3 °C/W
Stresses exceedin...