BF543
Silicon N-Channel
MOSFET Triode
For high-frequency stages up to 300 MHz
3
preferably in FM applications
IDSS = 4mA, g fs = 12mS
2 1
VPS05161
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BF543
Maximum Ratings Parameter Drain-source
voltage Drain current
Marking LDs 1=G
Pin Configuration 2=D 3=S
Package SOT23
Symbol VDS ID
Value 20 30 10 200 -55 .
.
.
150 -55 .
.
.
150 150
Unit V mA mW °C
Gate-source peak current Total power dissipation, TS 76 °C Storage temperature Ambient temperature range Channel temperature
IGSM
Ptot Tstg TA Tch
Thermal Resistance Channel - soldering point1) Rthchs
370
K/W
1For calculation of R thJA please ref...