BYD Microelectronics Co.
, Ltd.
BF9060BSNL
60V N-Channel
MOSFET
General Description
This Power
MOSFET device has specifically been designed to minimize input capacitance and gate charge.
It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications.
It is also intended for any application with low gate drive requirement.
Features
z VDS =60 V z ID =100A z Typical RDS(ON) =4.
5 m Ω (VGS=10V,ID=50A) z Fast switching z 100% avalanche tested z Improved dv/dt capability
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source
Voltage
ID Drain Current(continuous)at Tc=25℃
IDM Drain Current (pulsed)
VGS...