BYD Microelectronics Co.
, Ltd.
BF92N7002
60V N-Channel
MOSFET
General Description
This Power
MOSFET device has specifically been designed to minimize input capacitance and gate charge.
It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications.
It is also intended for any applications with low gate drive requirements.
Features
z VDS =60 V z ID =300mA z RDS(ON) =2.
8Ω TYP (VGS=10V)
RDS(ON) =3.
8Ω TYP (VGS=4.
5V) z Fast switching z 100% avalanche tested z Improved dv/dt capability
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source
Voltage
ID Drain Current(continuous)at Tc=25℃
VGS Gate-Sourc...