BYD Microelectronics Co.
, Ltd.
BF95N50T/BF95N50L
500V N-Channel
MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using VDMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features
z VDS =500 V z ID=5A z RDS(ON)≤1.
60Ω TYP(VGS=10V,ID=2.
5A) z Low CRSS (typical 7.
8 pF) z Fast switching
Absolute Maximum Ratings
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