Part Number
|
BFG10 |
Manufacturer
|
NXP |
Description
|
NPN 2 GHz RF power transistor |
Published
|
Mar 23, 2005 |
Detailed Description
|
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG10; BFG10/X NPN 2 GHz RF power transistor
Product specification Supersedes data o...
|
Datasheet
|
BFG10
|
Overview
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG10; BFG10/X NPN 2 GHz RF power transistor
Product specification Supersedes data of 1995 Mar 07 File under Discrete Semiconductors, SC14 1995 Aug 31
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.
9 GHz operating area • Gold metallization ensures excellent reliability.
APPLICATIONS • Common emitter class-AB operation in hand-held radio equipment at 1.
9 GHz.
DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package.
PINNING PIN DESCRIPTION
BFG10; BFG10/X
BFG10 (see Fig.
1) 1 2 3 4 collect...
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