Part Number
|
BFG11 |
Manufacturer
|
NXP |
Description
|
NPN 2 GHz RF power transistor |
Published
|
Mar 23, 2005 |
Detailed Description
|
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG11; BFG11/X NPN 2 GHz RF power transistor
Product specification Supersedes data o...
|
Datasheet
|
BFG11
|
Overview
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG11; BFG11/X NPN 2 GHz RF power transistor
Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Apr 07
Philips Semiconductors
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.
9 GHz operating area • Gold metallization ensures excellent reliability.
APPLICATIONS • Common emitter class-AB operation in hand-held radio equipment at 1.
9 GHz.
PINNING PIN BFG11 (see Fig.
1) 1 2 3 4 collector base emitter emitter
1 Top view
BFG11; BFG11/X
DESCRIPTION NPN silicon planar epitaxial transistors encapsulate...
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