BFG424F
NPN 25 GHz wideband transistor
Rev.
01 — 21 March 2006
Product data sheet
1.
Product profile
CAUTION
1.
1 General description
NPN double polysilicon wideband transistor with buried layer for low
voltage applications in a plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
MSC895
1.
2 Features
s Very high power gain s Low noise figure s High transition frequency s Emitter is thermal lead s Low feedback capacitance
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3 Applications
s Radio Frequency (RF) front end wideband applications such as: x analog and digital cellular telephones x cordless telephones (Cordless Tele...