DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D123
BFG520W; BFG520W/X NPN 9 GHz wideband transistors
Product specification Supersedes data of August 1995 1998 Oct 02
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability.
APPLICATIONS RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.
), radar detectors, pagers, satellite television tuners (SATV) and repeater
amplifiers in fibre-optic systems.
PINNING DESCRIPTION PIN BFG25...