DISCRETE SEMICONDUCTORS
DATA SHEET
BFG591 NPN 7 GHz wideband transistor
Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Sep 04
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability.
APPLICATIONS Intended for applications in the GHz range such as MATV or CATV
amplifiers and RF communications subscriber equipment.
PINNING PIN 1 2 3 4 base emitter collector DESCRIPTION emitter
1
Top view
BFG591
DESCRIPTION NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package.
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