Ordering number : ENA1689
BFL4007
SANYO Semiconductors
DATA SHEET
BFL4007
N-Channel Silicon
MOSFET
General-Purpose Switching Device Applications
Features
• Reverse recovery time trr=95ns (typ) • Input capacitance Ciss=1200pF (typ)
• ON-resistance RDS(on)=0.
52Ω (typ) • 10V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source
Voltage Gate-to-Source
Voltage
Drain Current (DC)
Drain Current (Pulse)
VDSS VGSS IDc*1 IDpack*2 IDP
Limited only by maximum temperature Tch=150°C Tc=25°C (SANYO’s ideal heat dissipation condition)*3 PW≤10μs, duty cycle≤1%
600 V ±30 V
14 A 8.
7 A 49 A
Source-to-Drain Diode Forward Current (DC) IS...