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SOT89 NPN SILICON PLANAR HIGH
VOLTAGE TRANSISTOR
ISSUE 3 - OCTOBER 1995 7
BFN16
C
COMPLEMENTARY TYPE PARTMARKING DETAILS -
BFN17 DD
E C B
SYMBOL VCBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE 250 250 5 500 200 100 1 -65 to +150 UNIT V V V mA mA mA W °C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER Collector-Base Breakdown
Voltage Collector-Emitter Breakdown
Voltage Emitter-Base Breakdown
Voltage Collector Cut-Off Curre...