BFP181R
NPN Silicon RF Transistor
For low noise, high-gain broadband
amplifiers at
collector currents from 0.
5 mA to 12 mA
fT = 8 GHz
F = 1.
45 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFP181R
Maximum Ratings Parameter
Marking RFs 1=E
Pin Configuration 2=C 3=E 4=B
Package SOT143R
Unit V
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value 12 20 20 2 20 2 175 150 -65 .
.
.
150 -65 .
.
.
150
Collector-emitter
voltage Collector-emitter
voltage Collector-base
voltage Emitter-base
voltage Collector current Base current Total power dissipation TS 75 °C 1) Junction temperature Ambient temperature Storage temperature
mA mW °C
Therm...