Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain
amplifiers up to 2 GHz • For linear broadband
amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available
3 4
BFP193
2 1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFP193
Marking
Pin Configuration
RCs 1 = C 2 = E 3 = B 4 = E -
-
Package SOT143
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter
voltage Collector-emitter
voltage Collector-base
voltage Emitter-base
voltage Collector current Base current Total power dissipation1) TS ≤ 72°C Junction temperature...