Low Noise Silicon Bipolar RF Transistor
• For ESD protected high gain low noise amplifier • High ESD robustness
typical value 1000 V (HBM) • Outstanding Gms = 21.
5 dB @ 1.
8 GHz
Minimum noise figure NFmin = 0.
9 dB @ 1.
8 GHz • Pb-free (RoHS compliant) and halogen-free package
with visible leads • Qualification report according to AEC-Q101 available
BFP540ESD
3
4
2 1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFP540ESD
Marking
Pin Configuration
AUs 1=B 2=E 3=C 4=E -
-
Package SOT343
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter
voltage TA = 25 °C TA = -55 °C Collector-emitter
voltage Collector-b...