Low Noise SiGe:C Bipolar RF Transistor
• Highly linear low noise RF transistor • Provides outstanding performance
for a wide range of wireless applications • Based on Infineon's reliable high volume
Silicon Germanium technology
• Ideal for CDMA and WLAN applications • Collector design provides high linearity of
14.
5 dBm OP1dB for low
voltage application • Maximum stable gain
Gms = 21.
5 dB at 1.
8 GHz Gma = 11 dB at 6 GHz • Outstanding noise figure NFmin = 0.
7 dB at 1.
8 GHz Outstanding noise figure NFmin = 1.
3 dB at 6 GHz • Accurate SPICE GP model enables effective design in process • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q...