BFQ 193
NPN Silicon RF Transistor • For low noise, high-gain
amplifiers up to 2GHz • For linear broadband
amplifiers • fT = 7.
5 GHz
F = 1.
3 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFQ 193 Marking Ordering Code RCs Q62702-F1312 Pin Configuration 1=B 2=C 3=E Package SOT-89
Maximum Ratings Parameter Collector-emitter
voltage Collector-base
voltage Emitter-base
voltage Collector current Base current Total power dissipation Symbol Values 12 20 2 80 10 mW 600 150 - 65 .
.
.
+ 150 - 65 .
.
.
+ 150 ≤ 95 °C mA Unit V
VCEO VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS ≤ 93 °C
Junction temperature Ambient temperature Storage temperature Thermal Resistance...