DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ621 NPN 7 GHz wideband transistor
Product specification Supersedes data of 1995 Apr 11 File under Discrete Semiconductors, SC14 1995 Sep 26
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
FEATURES • High power gain • High output
voltage • High maximum junction temperature • Gold metallization ensures excellent reliability.
APPLICATIONS It is primarily intended for use in MATV and microwave
amplifiers, such as aerial
amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc.
PINNING PIN 1 2 3 4 collector emitter base emitter Fig.
1 SOT172A2.
DESCRIPTION
Top view 2
MSA457
BFQ621
DESCRIPTION Silicon NPN transistor in a ...