BFR 182
NPN Silicon RF Transistor • For low noise, high-gain broadband
amplifiers at collector currents from 1mA to 20mA • fT = 8GHz
F = 1.
2dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 182 RGs Q62702-F1315 1=B 2=E 3=C
Package SOT-23
Maximum Ratings Parameter Collector-emitter
voltage Collector-emitter
voltage Collector-base
voltage Emitter-base
voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 35 4 mW 250 150 - 65 .
.
.
+ 150 - 65 .
.
.
+ 150 ≤ 230 °C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS ≤ 93 °C
Junction temperature Ambient temperature Stor...