BFR 35AP
NPN Silicon RF Transistor • For low distortion broadband
amplifiers and oscillators up to 2GHz at collector currents from 0.
5mA to 20mA
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 35AP GEs Q62702-F938 1=B 2=E 3=C
Package SOT-23
Maximum Ratings Parameter Collector-emitter
voltage Collector-emitter
voltage Collector-base
voltage Emitter-base
voltage Collector current Base current Total power dissipation Symbol Values 15 20 20 2.
5 30 4 mW 280 150 - 65 .
.
.
+ 150 - 65 .
.
.
+ 150 ≤ 365 °C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS ≤ 48 °C
Junction temperature Ambient temperature Storage tem...