Part Number
|
BGA8U1BN6 |
Manufacturer
|
Infineon |
Description
|
Low Noise Amplifier |
Published
|
Jun 18, 2018 |
Detailed Description
|
BGA8U1BN6
BGA8U1BN6
Low Noise Amplifier for Ultra High Band 4-6GHz (f.e. LTE - U/ LAA with bypass)
Features
• Operati...
|
Datasheet
|
BGA8U1BN6
|
Overview
BGA8U1BN6
BGA8U1BN6
Low Noise Amplifier for Ultra High Band 4-6GHz (f.
e.
LTE - U/ LAA with bypass)
Features
• Operating frequencies: 4.
0 - 6.
0 GHz • Insertion power gain: 13.
7 dB • Insertion Loss in bypass mode: 7.
5 dB • Low noise figure: 1.
6 dB • Low current consumption: 4.
5 mA • Multi-state control: OFF-, bypass- and high gain-Mode • Ultra small TSNP-6-2 leadless package • RF input and RF output internally matched to 50 Ohm, no external
components necessary
0.
7 x 1.
1 mm2
Application The LTE data rate can be significantly improved by using the Low Noise Amplifier.
The integrated bypass function increases the overall system dynamic range and leads to more flexibility in the RF front-end...
Similar Datasheet