DISCRETE SEMICONDUCTORS
DATA SHEET
M3D737
BGF944 GSM900 EDGE power module
Product specification Supersedes data of 2003 Feb 26 2003 Jun 06
Philips Semiconductors
Product specification
GSM900 EDGE power module
FEATURES • Typical GSM EDGE performance at a supply
voltage of 26 V: – Output power = 2.
5 W – Gain = 29 dB – Efficiency = 15% – ACPR −65 dBc at 400 kHz – rms EVM 0.
4% – peak EVM 1.
2% • Low distortion to a GSM EDGE signal • Excellent 2-tone performance • Low die temperature due to copper flange • Integrated temperature compensated bias • 50 Ω input/output impedance • Flat gain over frequency band.
APPLICATIONS • Base station RF power
amplifiers in the 920 to 960 MHz frequency b...