10A,800V N-Channel Power
Mosfet
FEATURES
RDS(ON) =1.
1Ω@ VGS = 10V Ultra Low Gate Charge ( Typical 45 nC )
Pb
Lead-free
Low Reverse Transfer Capacitance ( CRSS = Typical 15 pF )
Fast Switching Capability
Avalanche Energy Specified
Improved dv/dt Capability, High Ruggedness
Production specification
BL10N80F
ITO-220AB
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
VDSS
Drain-Source
voltage
VGSS
ID
IDM EAS EAR dv/dt
Gate -Source
voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Energy
Single Pulsed Repetitive
Peak Diode Recovery dv/dt
PD Power Dissipation
θJA Junction to Ambient
θJC Junction to Case
TJ Junction Temperature T...