N-Channel Power
MOSFET
FEATURES
RDS(on) = 240 m (Typ.
) @ VGS = 10 V, ID = 7.
5 A Low Gate Charge (Typ.
28 nC) Low Crss (Typ.
17 pF) 100% Avalanche Tested Improved dv/dt Capability RoHS Compliant
APPLICATIONS
Lighting Uninterruptible Power Supply
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol Parameter
VDS Drain-Source
Voltage
VGS ID IDM EAS EAR IAR dv/dt
PD
Gate -Source
Voltage
Drain Current Continuous at TC=25℃ Continuous at TC=100℃
Drain Current(pulsed)Note1
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Avalanche Current (Note 1) Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
TC=25℃ Derate above 25°C
RθJA RθJC...