2 Amps, 600 Volts N-CHANNEL
MOSFET
FEATURES
RDS(on)=3.
8Ω@VGS=10V.
Pb
Ultra Low gate charge (typical 9.
0nC) Lead-free
Low reverse transfer capacitance (Crss = typical 5.
0 pF)
Fast switching capability
Avalanche energy specified
Improved dv/dt capability, high ruggedness
Production specification
BL2N60F
ITO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VDSS ID
IDP VGSS
Drain-Source
voltage Drain current continuous
Drain current Pulsed (Note2) Gate -Source
voltage
(TC=25℃) (TC=100℃)
600 2.
0 1.
26
8.
0
±30
V A
A V
IAR EAR EAS dv/dt
Avalanche Current (Note2)
2.
0
Avalanche Energy
Repetitive(Note...