Production specification
P-Channel Enhancement Mode Field Effect Transistor BL3407
FEATURES
Electrostatic Sensitive Devices.
VDS (V) = - 30V ID = - 4.
1 RDS(ON) 52mΩ (VGS = -10V)
RDS(ON) 87mΩ (VGS = -4.
5V)
Pb
Lead-free
APPLICATIONS
P-channel enhancement mode effect transistor.
Switching application.
ORDERING INFORMATION
Type No.
Marking
BL3407
3407
SOT-23
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
Drain-Source
voltage
-30
VGSS ID
IDM PD RθJA
Gate -Source
voltage
±20
Continuous Drain CurrentA
@ TA = 25 ℃ @ TA = 70 ℃
Pulsed Drain Current a
Power Dissipation
@ TA = 25 ℃ @ TA = 70 ℃
Thermal resistanc...