Production specification
Dual P-Channel Enhancement Mode Field Effect Transistor BL3415
FEATURES
Electrostatic Sensitive Devices.
VDS (V) = -20V ID =-4 A RDS(ON) 50mΩ (VGS = -4.
5V)
RDS(ON) 70mΩ (VGS = -2.
5V) RDS(ON) 100mΩ (VGS = -1.
8V)
Pb
Lead-free
APPLICATIONS
P-channel enhancement mode effect transistor.
Switching application.
ORDERING INFORMATION
Type No.
Marking
BL3415
3415
SOT-23
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
VDSS VGSS ID
IDM
Drain-Source
voltage Gate -Source
voltage Continuous Drain CurrentA
Pulsed Drain Current a
@ TA = 25 ℃ @ TA = 70 ℃
PD Power Dissipation
@ TA = 25 ℃ @ TA = 70 ℃
RθJA Therm...